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System onlinePrecision Mo/Si Multilayer Coating for Extreme Ultraviolet
13.5nm EUV Multilayer Mirror
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Key specifications
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Applications
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Performance features
Overview
Technical record / 0002
EUV multilayer mirrors are critical enabling components for extreme ultraviolet lithography (EUVL), the technology driving advanced semiconductor manufacturing at sub-7nm nodes. Our mirrors use Mo/Si multilayer coatings deposited via magnetron sputtering, achieving near-normal incidence reflectivity exceeding 69% at 13.5nm.
Each mirror consists of 40–70 alternating bilayers of molybdenum and silicon, with individual layer thicknesses precisely controlled to ±0.02nm. The d-spacing profile precision reaches ±0.005nm RMS, ensuring uniform performance across the entire optical surface.
Key Features
What Sets This Product Apart
01Ultra-high reflectivity >69% at 13.5nm — maximizing system throughput
02Precision d-spacing control ±0.005nm RMS for uniform performance
03Broad material selection: Mo/Si, La/B, Ru/B₄C, and custom pairs
04Large production capability: up to 750mm diameter optics
05Custom capping layers for extended environmental stability
06Decades of optimization — Mo/Si is the industry standard for EUVL
Specifications
Technical Details
- 01Peak Wavelength: 13.50 nm / 13.52 nm
- 02Peak Reflectivity: >69% at near-normal incidence
- 03Coating: Mo/Si multilayer, 40–70 bilayers
- 04d-spacing Precision: ±0.005 nm RMS
- 05Layer Thickness Control: <±0.02 nm
- 06Substrate Options: Single crystal silicon, ULE glass
- 07Surface Quality: 60/40, 40/20, 20/10, 10/5 scratch-dig
- 08Surface Roughness: <3 Å RMS
- 09Spectral Bandwidth (FWHM): ~0.5–0.56 nm
- 10Size Range: 0.5 mm to 750 mm diameter; linear up to 1.5 m × 0.5 m
Applications
Where It Excels
- 01EUV lithography illumination and projection optics
- 02EUV metrology and mask inspection
- 03Coherent diffractive imaging (CDI)
- 04High-harmonic generation (HHG) beam steering
- 05Astronomy, solar physics and plasma diagnostics
- 06Synchrotron beamline optics
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