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System onlineMo/Si Coatings - Reflectance >65% at 13.5 nm

EUV Multilayer Mirrors - 13.5 nm

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Key specifications
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Applications
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Performance features
Key Features

What Sets This Product Apart

01High reflectance at 13.5 nm for EUV lithography
02Scalable from 25 mm to 650 mm
03Low defect density for high-power EUV sources
Specifications

Technical Details

  • 01Reflectance: >65% @ 13.5 nm (6 deg AOI)
  • 02Bandwidth: >500 pm FWHM
  • 03Standard Size: 1 inch x 6.35 mm
  • 04Figure Error: lambda/20 standard, lambda/50 custom
  • 05Surface Roughness: <0.3 nm RMS
  • 06Substrates: Fused silica, silicon, ULE, metal
  • 07Custom: Up to 650 mm diameter
Applications

Where It Excels

  • 01EUV lithography
  • 02EUV metrology and inspection
  • 03Synchrotron and FEL beamlines
  • 04High-harmonic generation optics
Gallery

Product Images

EUV Multilayer Mirrors - 13.5 nm - Image 1
EUV Multilayer Mirrors - 13.5 nm - Image 2
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EUV Multilayer Mirrors - 13.5 nm | Products | Opticore Innovations