EUV optics
13.5nm EUV Multilayer Mirror
Precision Mo/Si Multilayer Coating for Extreme Ultraviolet
- Peak Wavelength
- 13.50 nm / 13.52 nm
- Peak Reflectivity
- >69% at near-normal incidence
- Coating
- Mo/Si multilayer, 40–70 bilayers
Overview
Technical record / 0016
EUV multilayer mirrors are critical enabling components for extreme ultraviolet lithography (EUVL), the technology driving advanced semiconductor manufacturing at sub-7nm nodes. Our mirrors use Mo/Si multilayer coatings deposited via magnetron sputtering, achieving near-normal incidence reflectivity exceeding 69% at 13.5nm.
Each mirror consists of 40–70 alternating bilayers of molybdenum and silicon, with individual layer thicknesses precisely controlled to ±0.02nm. The d-spacing profile precision reaches ±0.005nm RMS, ensuring uniform performance across the entire optical surface.
What Sets This Product Apart
Technical Details
- Peak Wavelength
- 13.50 nm / 13.52 nm
- Peak Reflectivity
- >69% at near-normal incidence
- Coating
- Mo/Si multilayer, 40–70 bilayers
- d-spacing Precision
- ±0.005 nm RMS
- Layer Thickness Control
- <±0.02 nm
- Substrate Options
- Single crystal silicon, ULE glass
- Surface Quality
- 60/40, 40/20, 20/10, 10/5 scratch-dig
- Surface Roughness
- <3 Å RMS
- Spectral Bandwidth (FWHM)
- ~0.5–0.56 nm
- Size Range
- 0.5 mm to 750 mm diameter; linear up to 1.5 m × 0.5 m
Where It Excels
- 01EUV lithography illumination and projection optics
- 02EUV metrology and mask inspection
- 03Coherent diffractive imaging (CDI)
- 04High-harmonic generation (HHG) beam steering
- 05Astronomy, solar physics and plasma diagnostics
- 06Synchrotron beamline optics
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